Chemical etching characteristics for cellulose nitrate
نویسندگان
چکیده
Cellulose nitrate films (commercially available as LR 115 films were irradiated systematically with alpha particles in the energy range from 1 to 5 MeV with incident angles from 30◦ to 90◦. After etching to remove a thickness of 6.5 m, the lengths of the major and minor axes of the alpha-particle track openings in the films were measured with an image analyser under an optical magnification of 103. These data were used altogether to derive a V function (ratio between the track etch rate and the bulk etch rate), which took the functional form of the Durrani–Green’s function, i.e., V = 1 + (a1 exp(−a2R′) + a3 exp(−a4R′))(1 − exp(−a5R′)), but with new constants as a1 = 2.14, a2 = 0.12, a3 = 2.7 and a4 = 0.135 (a5 = 1). We then went on to correct for the different etched thickness for different datasets. With these corrections, the experimental data were found to fit the model very satisfactorily. It was also interesting to see that the range of the calculated etched layer w ©
منابع مشابه
Highly Chemical Reactive Ion Etching of Gallium Nitride
A highly chemical reactive ion etching process has been developed for MOVPE-grown GaN on sapphire. The key element for the enhancement of the chemical property during etching is the use of a fluorine containing gas in a chlorine based chemistry. In the perspective of using GaN substrates for homo-epitaxy of high quality GaN/AlGaN structures we have used the above described RIE process to smooth...
متن کاملBulk etch characteristics of colorless LR 115 SSNTD
The colorless LR 115 solid-state nuclear track detector (SSNTD) (from DOSIRAD) is based on cellulose nitrate and was first studied in view of its applicability in radiobiological experiments with alpha particles. In this paper, the bulk etch characteristics were studied. We first showed that the shape of the alpha-particle tracks are irregular with blurred contours under the optical microscope....
متن کاملImproved Leakage Current, Output Power, and Electrostatic Discharge Characteristics of GaN LEDs by Chemical Etching
We report the effect of chemical etching of p-GaN using molten KOH:NaOH solution on leakage currents, light output power, and electrostatic discharge ESD characteristics of GaN light-emitting diodes LEDs . Photoluminescence and capacitance–voltage measurement indicated that a deep donor–acceptor pair DDAP was densely concentrated near the p-GaN surface region 18 nm and the defects were effectiv...
متن کاملChemical etching of manganese oxides for electrocatalytic oxygen reduction reaction.
Mixed-valent MnO(x) (1 < x < 2) was selectively synthesized by chemically etching MnO and Mn2O3 with ceric ammonium nitrate. The obtained MnO(x) exhibited greatly enhanced electrocatalytic activity toward the oxygen reduction reaction (ORR) as compared to the corresponding pristine oxides.
متن کاملFabrication and Optical Characterization of Silicon Nanostructure Arrays by Laser Interference Lithography and Metal-Assisted Chemical Etching
In this paper metal-assisted chemical etching has been applied to pattern porous silicon regions and silicon nanohole arrays in submicron period simply by using positive photoresist as a mask layer. In order to define silicon nanostructures, Metal-assisted chemical etching (MaCE) was carried out with silver catalyst. Provided solution (or materiel) in combination with laser interference lithogr...
متن کامل